Mohamed Boutchich

Laboratoire Génie Électrique et Électronique de PariS

mohamed.boutchich [at] centralesupelec.fr

En savoir plus sur Mohamed Boutchich

Publications :

  • Article in a review - 27 documents
    • Mohamed Boutchich, Keiki Fukumoto, Aymen Mahmoudi, Alexandre Jaffré, José Alvarez, David Alamarguy, Chanan Euaruksakul, Fabrice Oehler, Abdelkarim Ouerghi. Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe 2 –Graphene Heterostructure via Photoemission Electron Microscopy, 2024-09-03. (https://hal.science/hal-04692698v1)
    • Weng Hou Yip, Qundong Fu, Jing Wu, Kedar Hippalgaonkar, Zheng Liu, Xingli Wang, Mohamed Boutchich, Beng Kang Tay. Few-layer Bi$_2$O$_2$Se: a promising candidate for high-performance near-room-temperature thermoelectric applications, 2024. (https://hal.science/hal-04692688v1)
    • Francesco Maddalena, Marcin Witkowski, Michal Makowski, Abdellah Bachiri, Arramel Arramel, Ting Yang, Muhammad Haris Mahyuddin, Matilde Baravaglio, Mohamed Boutchich, Winicjusz Drozdowski, Christophe Dujardin, Muhammad Danang Birowosuto, Cuong Dang. Photodetection and scintillation characterizations of novel lead-bismuth double perovskite halides, 2022. (https://hal.science/hal-03737940v1)
    • Keiki Fukumoto, Yuta Suzuki, Songyan Hou, Muhammad Danang Birowosuto, Alexandre Jaffre, David Alamarguy, Edwin Hang Tong Teo, Hong Wang, Beng Kang Tay, Mohamed Boutchich. Imaging the defect distribution in 2D hexagonal boron nitride by tracing photogenerated electron dynamics, 2020-09-30. (https://centralesupelec.hal.science/hal-04462845v1)
    • Kai Ping Chang, Haneen Abushammala, Mamina Sahoo, Alexandre Jaffre, David Alamarguy, Yu Jiang, Mohamed Boutchich, Chao-Sung Lai. Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device, 2020-06-28. (https://centralesupelec.hal.science/hal-04463031v1)
    • Chanan Euaruksakul, Hideki Nakajima, Arunothai Rattanachata, Muhammad y Hanna, Ahmad. R. T. Nugraha, Mohamed Boutchich. Electronic and Thermoelectric Properties of Graphene on 4H-SiC (0001) Nanofacets Functionalized with F4-TCNQ, 2020-05-15. (https://hal.sorbonne-universite.fr/hal-02884010v1)
    • Kai-Ping Chang, Kuan-I Ho, Mohamed Boutchich, Julien Chaste, Hakim Arezki, Chao-Sung Lai. Graphene/fluorographene heterostructure for nano ribbon transistor channel, 2019-11-28. (https://hal.science/hal-02403905v1)
    • Chaoyu Chen, José Avila, Hakim Arezki, van Luan Nguyen, Jiahong Shen, Marcin Mucha-Kruczyński, Fei Yao, Mohamed Boutchich, Yue Chen, Young Hee Lee, Maria Asensio. Large local lattice expansion in graphene adlayers grown on copper, 2018-05. (https://centralesupelec.hal.science/hal-02401969v1)
    • Keiki Fukumoto, Mohamed Boutchich, Hakim Arezki, Ken Sakurai, Daniela Di Felice, Yannick J. Dappe, Ken Onda, Shin-Ya Koshihara. Ultrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopy, 2017-11. (https://centralesupelec.hal.science/hal-01631643v1)
    • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements, 2017-09. (https://centralesupelec.hal.science/hal-01631793v1)
    • Chaoyu Chen, José Avila, Hakim Arezki, Fei Yao, van Luan Nguyen, Young Hee Lee, Mohamed Boutchich, Maria C. Asensio. Structural and electronic inhomogeneity of graphene revealed by Nano-ARPES, 2017-06-01. (https://centralesupelec.hal.science/hal-01631649v1)
    • Rudolf Brüggemann, Ming Xu, José Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence, 2017-06. (https://centralesupelec.hal.science/hal-01631792v1)
    • Jer-Chyi Wang, Kai-Ping Chang, Chih-Ting Li, Ching-Yuan Su, Fethullah Güneş, Mohamed Boutchich, Chang-Hsiao Chen, Ching-Hsiang Chen, Ching-Shiun Chen, Lain-Jong Lai, Chao-Sung Lai. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications, 2017-03-01. (https://centralesupelec.hal.science/hal-01428626v1)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, Pere Roca I Cabarrocas, Jean-Paul Kleider, Fei Yao, Young Hee Lee. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures, 2016-10. (https://hal.science/hal-01363551v1)
    • Haikel Sediri, Debora Pierucci, Mahdi Hajlaoui, Hugo Henck, Gilles Patriarche, Yannick J. Dappe, Sheng Yuan, Bérangère Toury, Rachid Belkhou, Mathieu G. Silly, Fausto Sirotti, Mohamed Boutchich, Abdelkarim Ouerghi. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure, 2015-11-20. (https://hal.sorbonne-universite.fr/hal-01257768v2)
    • Kuan-I Ho, Mohamed Boutchich, Ching-Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, Laurent Montès, Chao-Sung Lai. A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering, 2015-11. (https://centralesupelec.hal.science/hal-01257741v1)
    • Fethullah Günes, Hakim Arezki, Debora Pierucci, David Alamarguy, José Alvarez, Jean-Paul Kleider, Yannick J. Dappe, Abdelkarim Ouerghi, Mohamed Boutchich. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid, 2015-11. (https://centralesupelec.hal.science/hal-01244484v1)
    • Songphol Kanjanachuchai, Ming Xu, Alexandre Jaffré, Apichart Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich. Excitation transfer in stacked quantum dot chains, 2015-05. (https://hal.science/hal-01257798v1)
    • R. Othmen, H. Arezki, H. Ajlani, A. Cavanna, M. Boutchich, M. Oueslati, A. Madouri. Direct transfer and Raman characterization of twisted graphene bilayer, 2015-03. (https://hal.science/hal-01257805v1)
    • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich, Songphol Kanjanachuchai. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots, 2015-01-01. (https://centralesupelec.hal.science/hal-01239179v1)
    • Hakim Arezki, Kuan-I Ho, Alexandre Jaffré, David Alamarguy, J Alvarez, Jean-Paul Kleider, Chao-Sung Lai, Mohamed Boutchich. Characterization of N-doped multilayer graphene grown on 4H-SiC (0001), 2015-01-01. (https://centralesupelec.hal.science/hal-01239163v1)
    • M. Boutchich, H. Arezki, D. Alamarguy, K.-I. Ho, H. Sediri, F. Güneş, J. Alvarez, J. P. Kleider, C. S. Lai, A. Ouerghi. Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate, 2014-12. (https://centralesupelec.hal.science/hal-01099354v1)
    • José Alvarez, M. Boutchich, Jean-Paul Kleider, T. Teraji, Y. Koide. Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging, 2014-09. (https://centralesupelec.hal.science/hal-01099593v1)
    • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, Alexandre Barras, Y. Tanizawa, R. Tero, H. Okada, T.V. Thu, Jean-Paul Kleider, A. Sandhu. Characterization of graphene oxide reduced through chemical and biological processes, 2013-01. (https://centralesupelec.hal.science/hal-00931274v1)
    • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, Meiyong Liao, Imura Masataka, Yasuo Koide, Jean-Paul Kleider. Amorphous silicon diamond based heterojunctions with high rectification ratio, 2012-09. (https://centralesupelec.hal.science/hal-00778949v1)
    • Mohamed Boutchich, Katir Ziouche, M. Ait-Hammouda Yala, Pascale Godts, Didier Leclercq. Package-free infrared micro sensor using polysilicon thermopile, 2005-05-31. (https://hal.science/hal-00125621v1)
    • Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq. Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K, 2002. (https://hal.science/hal-00148729v1)
  • Communication on a congress - 34 documents
    • Hou Yip Weng, Fu Qundong, Wang Xingli, Boutchich Mohamed, Coquet Philippe, Tay Beng Kang. Growth and thermoelectric properties of few-layered Bismuth Oxyselenide, 2023-07-02. (https://hal.science/hal-04536957v1)
    • Mohamed Boutchich. Challenges in characterization of low dimensional materials: application to thermoelectrics, 2023-03-07. (https://hal.science/hal-04536894v1)
    • Mohamed Boutchich. Thermoelectric properties at the nanoscale, 2022-08-03. (https://hal.science/hal-04536903v1)
    • Mohamed Boutchich. Oral presentation - Work function mapping of functionalized graphene grown on 4H-SiC (0001) substrate, 2019-10-24. (https://hal.science/hal-04536916v1)
    • Mohamed Boutchich. Probing of the electronic properties of graphene and 2d analogues: ARPES & PEEM on graphene-based heterostructures, 2019-06-17. (https://hal.science/hal-04536906v1)
    • Hakim Arezki, Mohamed Boutchich, Alexandre Jaffré, J Alvarez, Julien Chaste, Jean-Paul Kleider, Gilles Patriarche. Probing the electronic properties of CVD graphene superlattices, 2016-09-09. (https://hal.science/hal-01533988v1)
    • Keiki Fukumoto, Hakim Arezki, Ken Onda, Shin-Ya Koshihara, Mohamed Boutchich. Spatio-temporal observation of photogenerated electron dynamics in twisted graphene, 2016-07-26. (https://hal.science/hal-01363553v1)
    • David Alamarguy, Hakim Arezki, Fethullah Gunes, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Mohamed Boutchich. Etude du Dopage de Graphène Epitaxial sur SiC(0001) par Spectroscopies de Photoélectrons, 2016-05-23. (https://centralesupelec.hal.science/hal-01449031v1)
    • Mohamed Boutchich. Probing and Modulation of the electronic properties of graphene for heterostructures, 2015-12-22. (https://hal.science/hal-01257875v1)
    • Mohamed Boutchich. Graphene and beyond for heterojunctions - Research opportunities, 2015-10-21. (https://hal.science/hal-01257922v1)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, J Alvarez, Pere Roca I. Cabarrocas, Jean-Paul Kleider, Fei Yao, Young Hee Lee. Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon, 2015-09-13. (https://hal.science/hal-01232115v1)
    • Ming Xu, Mohamed Boutchich, Igor Paul Sobkowicz, J Alvarez, Rudolf Brüggemann, Pere Roca I. Cabarrocas, Jean-Paul Kleider. Characterization of a-Si:H/c-Si heterojunction by temperature dependent modulated photoluminescence, 2015-09-13. (https://centralesupelec.hal.science/hal-01239190v1)
    • Mohamed Boutchich, Jean-Paul Kleider, Abdelkarim Ouerghi, Hong-Lee Younghee, Young Hee Lee, P.Roca I Cabarrocas, Chaoyu Chen, Jose Ávila, Asensio Maria-Carmen. Characterization of graphene and applications to heterojunctions, 2015-09-09. (https://hal.science/hal-01257911v1)
    • Ming Xu, Alexandre Jaffré, J Alvarez, Jean-Paul Kleider, Apichat Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich, Songphol Kanjanachuchai. Spatially resolved photoluminescence on multi stack InAs quantum dots, 2015-08-04. (https://hal.science/hal-01257898v1)
    • Alexandre Jaffré, Hakim Arezki, Mohamed Boutchich, J Alvarez, Jean-Paul Kleider. Coupling on a confocal imaging system µ-Raman, µ-PL, AFM and electrical extensions at a sub micrometric scale, 2015-08-04. (https://hal.science/hal-01259190v1)
    • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider, J Alvarez, David Alamarguy, Fethullah Gunes, Debora Pierucci. Work function engineering of doped Trilayer graphene grown on 4H-SiC (0001), 2015-07-20. (https://hal.science/hal-01257881v1)
    • Hakim Arezki, Mohamed Boutchich, Jean-Paul Kleider. Raman spectroscopy on Bi and Trilayer flakes of graphene, 2015-02-05. (https://hal.science/hal-01232095v1)
    • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Sediri Haikel, Fethullah Gunes, José Alvarez, Jean-Paul Kleider, Chao-Sung Lai, Abdelkarim Ouerghi. Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001), 2014-11-06. (https://centralesupelec.hal.science/hal-01104492v1)
    • Mohamed Boutchich, Hakim Arezki, David Alamarguy, K.I. Ho, Haikel Sediri, Fethullah Gunes, José Alvarez, Jean-Paul Kleider, C.S. Lai, A. Ouerghi. Doping and characterization of trilayer graphene on 4H-SiC (0001), 2014-11-04. (https://centralesupelec.hal.science/hal-01104494v1)
    • Adarsh Sandhu, Hiroshi Okada, Mohamed Boutchich, Shinya Maenosono, Renu Wadhwa. Preface: The Irago Conference 2014: A 360 Degree Outlook at Critical Scientific and Technological Challenges for a Sustainable Society, 2014-10-06. (https://hal.science/hal-02401926v1)
    • M. Xu, Mohamed Boutchich, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Nazir P. Kherani, Basia Halliop. TEMPERATURE DEPENDENT PHOTOLUMINESCENCE IN SILICON BASED HETEROJUNCTION SOLAR CELL, 2014-09-22. (https://centralesupelec.hal.science/hal-01099586v1)
    • Zakaria Djebbour, Walid Elhuni, Anne Migan-Dubois, Mohamed Boutchich, Jean-Paul Kleider, S. Franger, D. J. Rogers, K. Pantzas, A. Ougazzaden. Research & Partnership opportunities in III-V on Si at LGEP and Supélec, 2014-06-16. (https://centralesupelec.hal.science/hal-01099358v1)
    • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, Jean-Paul Kleider. Photoluminescence techniques for heterojunction solar cell characterization, 2013-12-03. (https://centralesupelec.hal.science/hal-00931327v1)
    • Ming Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, Jean-Paul Kleider. Photoluminescence techniques for heterojunction solar cell characterization, 2013-12-02. (https://centralesupelec.hal.science/hal-00931326v1)
    • Mohamed Boutchich, Alexandre Jaffré, David Alamarguy, José Alvarez, Alexandre Barras, Y. Tanizawa, R. Tero, H. Okada, T.V. Thu, Jean-Paul Kleider, A. Sandhu. Graphene oxide reduced through chemical and biological processes, 2012-11-15. (https://centralesupelec.hal.science/hal-00779022v1)
    • José Alvarez, Mohamed Boutchich, Djicknoum Diouf, Jean-Paul Kleider, M. Liao, M. Imura, Y. Koide. Ultraviolet photodetectors based on hydrogenated/oxidized diamond surfaces characterization of silicon heterojunctions for solar cells, 2012-03-23. (https://centralesupelec.hal.science/hal-00779008v1)
    • Mohamed Boutchich, José Alvarez, Djicknoum Diouf, Pere Roca I Cabarrocas, M Liao, I. Masataka, Y Koide, Jean-Paul Kleider. Amorphous and microcrystalline silicon diamond based heterojunctions, 2011-08. (https://centralesupelec.hal.science/hal-00710772v1)
    • Katir Ziouche, Mohamed Boutchich, M. Achani, Pascale Godts, Didier Leclercq. A new infrared microsensor, 2003. (https://hal.science/hal-00146386v1)
    • Pascale Godts, Katir Ziouche, Mohamed Boutchich, Didier Leclercq. Thermoelectric infrared microsensor using suspended membranes made by silicon micromachining, 2001-04-16. (https://hal.science/hal-00152189v1)
    • Didier Leclercq, Katir Ziouche, Mohamed Boutchich, Pascale Godts. New developments on IR distribution-patterned microradiometers family, 2001-04-16. (https://hal.science/hal-00152188v1)
    • Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq. A new ultra-violet microradiometer, 2001. (https://hal.science/hal-00152186v1)
    • Katir Ziouche, Mohamed Boutchich, Pascale Godts, Didier Leclercq. Réalisation de nouveaux microradiomètres sur silicium. Etude des propriétés thermoélectriques du polysilicium dopé N et P, 2001. (https://hal.science/hal-00152208v1)
    • Katir Ziouche, Mohamed Boutchich, Pascale Godts, Didier Leclercq. Méthode de mesure de l'absorptivité différentielle de 2 matériaux. Application en UV et IR, 2001. (https://hal.science/hal-00152207v1)
    • Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq. Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle, 2000. (https://hal.science/hal-00158491v1)
  • POSTER - 6 documents
    • R Brüggemann, Ming Xu, J Alvarez, Mohamed Boutchich, Jean-Paul Kleider. Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements, 2017-04-03. (https://centralesupelec.hal.science/hal-01632914v1)
    • M. Xu, Alexandre Jaffré, José Alvarez, Marie-Estelle Gueunier-Farret, Mohamed Boutchich, Jean-Paul Kleider. Photoluminescence techniques for heterojunction solar cell characterization, 2014-12-02. (https://centralesupelec.hal.science/hal-01099349v1)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, José Alvarez, Jean-Paul Kleider, Abdelkarim Ouerghi. Role of Anions in the AuCl3-Doping Trilayers N-doped Graphene on 4H-SiC (0001), 2014-11-06. (https://centralesupelec.hal.science/hal-01104496v1)
    • Ming Xu, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Apichat Jittrong, Thitipong Chokamnuai, Somsak Panyakeow, Mohamed Boutchich, Songphol Kanjanachuchai. Spatially resolved photoluminescence on multi stack InAs quantum dots, 2014-11-06. (https://centralesupelec.hal.science/hal-01104500v1)
    • Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, José Alvarez, Pere Roca I Cabarrocas Roca I Cabarrocas, Jean-Paul Kleider, Y. Fei, Y. Hee Lee. Engineering of CVD graphene optoelectronic properties Application as transparent electrode in solar cells, 2014-08-24. (https://centralesupelec.hal.science/hal-01104502v1)
    • Fethullah Gunes, David Alamarguy, Hakim Arezki, Alexandre Jaffré, José Alvarez, Jean-Paul Kleider, Mohamed Boutchich. Nitric Acid doping of epitaxial graphene on SiC (0001) substrate, 2014-05-06. (https://centralesupelec.hal.science/hal-01104503v1)
  • HDR - 1 document
  • PATENT - 1 document
    • Mohamed Boutchich, Chao-Sung Lai, Abdelkarim Ouerghi, Kuan-I Ho. Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric element, 2016-02-12. (https://hal.science/hal-01814906v1)
  • Other submission - 1 document